Power-supply apparatus

ABSTRACT

A power-supply apparatus according to an aspect includes an inductor, a transistor that supplies, in an on-state, a current to the input side of the inductor, a second transistor that becomes, when the first transistor is in an off-state, an on-state and thereby brings the input side of the inductor to a predetermined potential, a signal generation unit that generates voltage signals corresponding to a current flowing to the inductor, an amplifier that outputs a current according to the voltage signals, a converter that converts the current output from the amplifier into a voltage signal, and a control unit that controls the transistors based on a first feedback signal corresponding to the voltage on the output side of the inductor and the voltage signal, which is used as a second feedback signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese patent application No. 2013-001642, filed on Jan. 9, 2013, thedisclosure of which is incorporated herein in its entirety by reference.

BACKGROUND

The present invention relates to a power-supply apparatus, and inparticular to a power-supply apparatus using a peak current controlscheme.

In recent years, because of the demand for reducing the sizes and thepower consumptions of semiconductor devices, switching power-supplyapparatuses using switching circuits that are repeatedly turned on andoff at regular intervals have been widely used. As such switchingpower-supply apparatuses, DCDC converters using PWM (Pulse WidthModulation) control for adjusting the duty ratio of a pulse signal to beinput to a switching circuit have been known.

Japanese Unexamined Patent Application Publication No. 2007-215391discloses a technique for a switching power-supply apparatus capable ofresponding at high speed and operating with stability. JapaneseUnexamined Patent Application Publication No. 2009-219184 discloses atechnique for implementing a multi-phase power supply at low cost.

SUMMARY

In a switching power-supply apparatus, electric power to be supplied toa load is controlled by switching a high-potential side power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor) (hereinafterreferred to as “high-potential side FET) and a low-potential side powerMOSFET (hereinafter referred to as “low-potential side FET) in acomplementary manner. Note that in a peak current control typepower-supply apparatus, a current flowing to the high-potential side FETis detected and feedback control is performed by using the informationof the detected current.

In the technique disclosed in Japanese Unexamined Patent ApplicationPublication No. 2007-215391, a sense MOSFET (hereinafter referred to as“sense FET”) is used in order to detect the current flowing to thehigh-potential side FET. Since the sense FET needs to have a highdetection accuracy, it is necessary to use a purpose-built sense FETcorresponding to the high-potential side FET.

However, the present inventors have found the following problem. Namely,there is a problem that when a purpose-built sense FET corresponding tothe high-potential side FET is used, other high-potential side FETs(general-purpose high-potential side FETs) that do not correspond to thepurpose-built sense FET cannot be used. It is necessary to select thehigh-potential side FET and the low-potential side FET according to theload to which electric power is supplied. However, when a purpose-builtsense FET is used, a general-purpose high-potential side FET cannot beused because the sense FET is set with a certain high-potential sideFET. Therefore, there is a problem that the high-potential side FET tobe used cannot be freely selected.

Other problems to be solved as well as novel features will be moreapparent from the following description and the accompanying drawings.

A first aspect of the present invention is a power-supply apparatus inwhich a first voltage signal corresponding to a current flowing to aninductor is generated in a signal generation unit, and the first voltagesignal is converted into a current signal by a trans-conductanceamplifier. Further, the current signal output from the trans-conductanceamplifier is converted into a second voltage signal by using aconverter, and this second voltage signal is used as a feedback signal.

According to the above-described aspect, it is possible to provide apower-supply apparatus capable of freely selecting a power MOSFET to beused.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, advantages and features will be moreapparent from the following description of certain embodiments taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a circuit diagram showing a power-supply apparatus accordingto a first embodiment;

FIG. 2 is a timing chart for explaining an operation of a power-supplyapparatus according to a first embodiment;

FIG. 3 is a diagram showing an example of a semiconductor integratedcircuit including a power-supply apparatus;

FIG. 4 is a circuit diagram showing a power-supply apparatus accordingto a comparative example;

FIG. 5 is a circuit diagram showing a power-supply apparatus accordingto a second embodiment;

FIG. 6 is a timing chart for explaining an operation of a power-supplyapparatus according to a second embodiment;

FIG. 7 shows an example of operation waveforms of a power-supplyapparatus according to a second embodiment (without load); and

FIG. 8 shows an example of operation waveforms of a power-supplyapparatus according to a second embodiment (with load).

DETAILED DESCRIPTION First Embodiment

A power-supply apparatus according to a first embodiment is explainedhereinafter with reference to the drawings.

FIG. 1 is a circuit diagram showing a power-supply apparatus accordingto this embodiment. As shown in FIG. 1, the power-supply apparatusaccording to this embodiment includes, at least, an inductor L1, ahigh-potential side power MOSFET (QH: first transistor), a low-potentialside power MOSFET (QL: second transistor), a signal generation unit 12,a trans-conductance amplifier AMP1, a converter R2, and a control unit10.

The power-supply apparatus according to this embodiment supplies anoutput voltage Vout obtained by lowering the voltage of an input voltageVin, to a load LD. The output voltage Vout to be supplied to the load LDcan be adjusted by controlling the on/off timings of the high-potentialside FET (QH) and the low-potential side FET (QL). That is, thehigh-potential side FET (QH) and the low-potential side FET (QL) areconfigured so that they are turned on/off in a complementary manner.Further, by controlling the duty ratio of these on/off operations, theoutput voltage Vout can be adjusted. The duty ratio is determined bydetecting the output voltage Vout to be supplied to the load LD and thecurrent IL, and feeding back these two detection results. That is, thepower-supply apparatus according to this embodiment is a power-supplyapparatus using a peak current control scheme.

The high-potential side FET (QH) is disposed between the input voltageVin and the input side Lin of the inductor L1. The low-potential sideFET (QL) is disposed between the input side Lin of the inductor L1 andthe ground potential. When the high-potential side FET (QH) is in anon-state and the low-potential side FET (QL) is in an off-state, acurrent is supplied to the input side Lin of the inductor L1. In thisstate, a current IL flows to the inductor L1 and this current issupplied to the load LD. A capacitive element Cv is disposed between theoutput side Lout of the inductor L1 and the ground potential. Bydisposing the capacitive element Cv, the output voltage Vout issmoothed.

On the other hand, when the high-potential side FET (QH) is in anoff-state and the low-potential side FET (QL) is in an on-state, theinput side Lin of the inductor L1 is brought to a predeterminedpotential. That is, since the low-potential side FET (QL) becomes anon-state, the input side Lin of the inductor L1 is connected to theground potential. Therefore, the counter electromotive force that occursin the inductor L1 can be clamped. Each of the high-potential side FET(QH) and the low-potential side FET (QL) can be formed by using, forexample, an N-channel type vertical power MOSFET.

The signal generation unit 12 generates voltage signals V1 and V2 (firstvoltage signals) corresponding to the current IL (first current) flowingto the inductor L1. Note that the voltage signals V1 and V2 correspondto a voltage difference generated by the DC (Direct Current) resistivecomponent DCR of the inductor L1. That is, the inductor L1 includes aninductive component L and the DC resistive component DCR. Therefore, bydetecting the potential difference between the input side and the outputside of this DC resistive component DCR, the current flowing through theinductor L1 can be detected.

The signal generation unit 12 can be formed by using a CR-circuitincluding a capacitive element C1 and a resistive element R1 connectedin series. The CR-circuit is connected in parallel with the inductor L1.As shown in FIG. 1, one end of the resistive element R1 (first resistiveelement) provided in the CR-circuit is connected to the input side Linof the inductor L1, and one end of the capacitive element C1 isconnected to the output side Lout of the inductor L1. Further, the otherend of the resistive element R1 and the other end of the capacitiveelement C1 are connected to each other. The one end of the capacitiveelement C1 is connected to the non-inverting input of thetrans-conductance amplifier AMP1 (hereinafter referred to as “amplifierAMP1”), and the other ends of the resistive element R1 and thecapacitive element C1 are connected to the inverting input of theamplifier AMP1. That is, the potential difference across the capacitiveelement C1 is output to the amplifier AMP1 as the voltage signals V1 andV2.

In the following explanation, the inductance of the inductor L1 isrepresented as “L1”; the DC resistive component DCR is represented as“R0”; the capacitance of the capacitive element C1 is represented as“C1”; and the resistance of the resistive element R1 is represented as“R1”. It is necessary to make the time constant L1/R0 of the inductor L1equal to the time constant R1*C1 of the CR-circuit. Therefore, thecapacitance C1 of the capacitive element C1 and the resistance R1 of theresistive element R1 of the signal generation unit 12 are adjusted sothat the relation “L1/R0=R1*C1” is satisfied.

The amplifier AMP1 outputs a current (second current) according to thevoltage signals V1 and V2 generated by the signal generation unit 12.That is, the amplifier AMP1 has such a property that it outputs acurrent in proportion to the input voltage. In this case, the amplifierAMP1 outputs a current in proportion to the potential difference acrossthe capacitive element Cl.

Then, the current output from the amplifier AMP1 is converted into avoltage signal CS (second voltage signal) by the converter R2. Forexample, the converter R2 can be formed by using a resistive element(second resistive element) whose one end is connected to the output sideof the amplifier AMP1 and whose other end is connected to the ground.

Further, a bias current source Ib for supplying a bias current may bedisposed on the output side of the amplifier AMP1. When the bias currentsource Ib is provided, a voltage signal that is obtained by convertingthe total of the current output from the amplifier AMP1 and the currentsupplied from the bias current source by the converter R2 is used as thevoltage signal CS. In other words, the voltage signal CS can bepositively biased by an amount equivalent to the current supplied fromthe bias current source.

There are cases where a negative ripple current occurs in the inductorL1. In such cases, the resistive element R2, which is the converter,needs to generate a negative voltage. However, when the amplifier AMP1is configured in such a manner that the ground potential is used as thereference voltage, the negative voltage cannot be generated. In suchcases, the voltage signal CS can be kept in a positive value range atall times by disposing the bias current source Ib on the output side ofthe amplifier AMP1.

The control unit 10 controls the high-potential side FET (QH) and thelow-potential side FET (QL) based on a first feedback signal EOcorresponding to the voltage Vout on the output side Lout of theinductor L1 and the voltage signal CS (second feedback signal).

Note that the first feedback signal EO is generated by a controller 20.The controller 20 includes an amplifier AMP2 and an error amplifier EA.A potential Vsen− (ground potential) on the low-potential side of theload LD is supplied to the inverting input of the amplifier AMP2, and apotential Vsen+ (Vout) on the high-potential side of the load LD issupplied to the non-inverting input. The amplifier AMP2 outputs apotential Vout′ corresponding to the potential difference between thepotentials Vsen− and Vsen+. For example, the amplifier AMP2 can beformed by using an amplifier that outputs a potential that is obtainedby multiplying the potential difference between the potentials Vsen− andVsen+ by one. In this case, since the potential Vsen− is the groundpotential, the output Vout′ of the amplifier AMP2 is substantially equalto the output voltage Vout.

A reference voltage Vref is supplied to the non-inverting input of theerror amplifier EA, and the output Vout′ of the amplifier AMP2 issupplied to the inverting input. Further, the error amplifier EA outputsthe first feedback signal EO corresponding to the difference between thereference voltage Vref and the output Vout′ of the amplifier AMP2.

A comparator CMP1 provided in the control unit 10 receives the firstfeedback signal EO and the second feedback signal CS (i.e., the voltagesignal CS) and outputs a comparison result of these feedback signals toa reset input R of a flip-flop FF1. Specifically, the comparator CMP1outputs a high-level signal (“1”) to the reset input R of the flip-flopFF1 at a timing at which the second feedback signal CS becomes largerthan the first feedback signal EO.

A clock signal CLK output from a clock generation circuit 21 provided inthe controller 20 is supplied to a set input S of the flip-flop FF1. Forexample, the clock signal CLK is a trigger signal. Further, theflip-flop FF1 outputs, from its non-inverting output Q, a signal PWM forPWM control to a driver 11. The driver 11 drives the high-potential sideFET (QH) and the low-potential side FET (QL) according to the signalPWM. For example, when the signal PWM is at a high level, the driver 11turns on the high-potential side FET (QH) and turns off thelow-potential side FET (QL). Further, when the signal PWM is at a lowlevel, the driver 11 turns off the high-potential side FET (QH) andturns on the low-potential side FET (QL).

Next, an operation of the power-supply apparatus according to thisembodiment is explained with reference to a timing chart shown in FIG.2. At a timing t1, when a high-level clock signal CLK is supplied fromthe clock generation circuit 21 to the set input S of the flip-flop FF1,the flip-flop FF1 outputs a high-level signal PWM from its non-invertingoutput Q. At this point, since the second feedback signal CS is smallerthan the first feedback signal EO, the output of the comparator CMP1remains at the low level. The signal PWM remains at the high level untila high-level signal is supplied to the reset input R.

When the signal PWM becomes a high level, the driver 11 turns on thehigh-potential side FET (QH) and turns off the low-potential side FET(QL). That is, when the voltage of the first feedback signal EO islarger than the voltage of the second feedback signal CS, the controlunit 10 turns on the high-potential side FET (QH) and turns off thelow-potential side FET (QL). As a result, a current is supplied to theinductor L1 and this current is supplied to the load LD.

The signal generation unit 12 outputs voltage signals V1 and V2corresponding to the current IL flowing through the inductor L1. Theamplifier AMP1 outputs a current according to the voltage signals V1 andV2 output from the signal generation unit 12. Then, the current outputfrom the amplifier AMP1 is converted into the voltage signal CS, whichis the second feedback signal, by the converter R2. When thehigh-potential side FET (QH) is in an on-state, the current continues tobe supplied to the inductor L1. Therefore, the second feedback signalCS, which corresponds to the current flowing to the inductor L1,continues to increase.

Further, since the current continues to be supplied to the inductor L1,the output voltage Vout also rises. Therefore, the first feedback signalEO corresponding to the output voltage Vout decreases. Note that theoutput voltage Vout and the first feedback signal EO have such arelation that when the output voltage Vout increases, the first feedbacksignal EO decreases, and when the output voltage Vout decreases, thefirst feedback signal EO increases.

Then, at a timing t2, when the second feedback signal CS becomes largerthan the first feedback signal EO, the comparator CMP1 outputs ahigh-level signal (“1”) to the reset input R of the flip-flop FF1. Uponreceiving the high-level signal, the flip-flop FF1 lowers itsnon-inverting output Q to a low level. Therefore, the signal PWM becomesa low level.

When the signal PWM becomes a low level, the driver 11 turns off thehigh-potential side FET (QH) and turns on the low-potential side FET(QL). As a result, the input side Lin of the inductor L1 is connected tothe ground potential, and the counter electromotive force that occurs inthe inductor L1 is clamped.

Since the high-potential side FET (QH) remains in the off-state afterthat, no current is supplied to the input side Lin of the inductor L1through the high-potential side FET (QH). Therefore, the state where thesecond feedback signal CS is smaller than the first feedback signal EOis maintained.

Then, at a timing t3, when a high-level clock signal CLK is suppliedfrom the clock generation circuit 21 to the set input S of the flip-flopFF1 again, the flip-flop FF1 outputs a high-level signal PWM from itsnon-inverting output Q. At this point, since the second feedback signalCS is smaller than the first feedback signal EO, the output of thecomparator CMP1 remains at the low level. The signal PWM remains at thehigh level until a high-level signal is supplied to the reset input R.The subsequent operations are similar to the above-explained operations,and therefore a duplicated explanation is omitted.

Note that the width of the signal PWM in the timing t1 to t2 is narrowerthan the width of the signal PWM in the timing t5 to t6. This is becausethe value of the first feedback signal EO in the timing t1 to t2 issmaller than the value of the first feedback signal EO in the timing t5to t6. That is, since the value of the output voltage Vout is larger inthe timing t1 to t2 than in the timing t5 to t6, the width of the signalPWM is set to a narrower width and the duration in which thehigh-potential side FET (QH) is in an on-state is shorter.

FIG. 3 is a diagram showing an example of a semiconductor integratedcircuit including a power-supply apparatus according to this embodiment.FIG. 3 shows a case where three semiconductor chips 31 to 33 are mountedon one package substrate 34 in the semiconductor integrated circuit 30.Among the three semiconductor chips, a high-potential side power MOSFET(QH) is formed, for example, in the semiconductor chip 31. Alow-potential side power MOSFET (QL) is formed in the semiconductor chip32. A control unit 10 and a trans-conductance amplifier AMP1 are formedin the semiconductor chip 33.

By forming the semiconductor chip 31 including the high-potential sidepower MOSFET (QH) formed therein, the semiconductor chip 32 includingthe low-potential side power MOSFET (QL) formed therein, and thesemiconductor chip 33 including the control unit 10 and thetrans-conductance amplifier AMP1 formed therein independently of eachother as shown above, it is possible to arbitrarily combine thesesemiconductor chips 31 to 33. For example, it is possible to select thesemiconductor chip 31 including the high-potential side power MOSFET(QH) formed therein and the semiconductor chip 32 including thelow-potential side power MOSFET (QL) formed therein according to theload to which the power-supply apparatus supplies electric power.

As explained above, in the switching power-supply apparatus, theelectric power to be supplied to the load is controlled by switching thehigh-potential side FET and the low-potential side FET in acomplementary manner. Note that in a peak current control typepower-supply apparatus, a current flowing through the high-potentialside FET is detected and feedback control is performed by using theinformation of this detected current.

In the technique disclosed in Japanese Unexamined Patent ApplicationPublication No. 2007-215391, a sense MOSFET (sense FET) is used todetect a current flowing through the high-potential side FET. Since thesense FET needs to have a high detection accuracy, it is necessary touse a purpose-built sense FET corresponding to the high-potential sideFET.

However, there has been a problem that when a purpose-built sense FETcorresponding to the high-potential side FET is used, otherhigh-potential side FETs (general-purpose high-potential side FETs) thatdo not correspond to the purpose-built sense FET cannot be used. It isnecessary to select the high-potential side FET and the low-potentialside FET according to the load to which electric power is supplied.However, when a purpose-built sense FET is used, a general-purposehigh-potential side FET cannot be used because the sense FET is set witha certain high-potential side FET. Therefore, there has been a problemthat the high-potential side FET to be used cannot be freely selected.

FIG. 4 is a circuit diagram showing a power-supply apparatus accordingto a comparative example. In FIG. 4, components similar to those in thepower-supply apparatus shown in FIG. 1 are denoted by the same referencenumerals.

A high-potential side FET (QH) is disposed between an input voltage Vinand the input side Lin of an inductor L1. A low-potential side FET (QL)is disposed between the input side Lin of the inductor L1 and the groundpotential. Further, a sense FET (Q11) for detecting a current flowingthrough the high-potential side FET (QH) is provided. The high-potentialside FET (QH) and the sense FET (Q11) form a current-mirror circuit, andthey are configured so that a current equal to 1/N of the currentflowing to the high-potential side FET (QH) flows to the sense FET(Q11).

The source of the sense FET (Q11) is connected to the inverting input ofan amplifier AMP11 and the source of the high-potential side FET (QH) isconnected to the non-inverting input of the amplifier AMP11. Further,the output of the amplifier AMP11 is connected to the gate of a P-typeFET (Q12). By disposing the amplifier AMP11, the source potential of thehigh-potential side FET (QH) can be made equal to the source potentialof the sense FET (Q11).

Further, a feedback signal CS corresponding to the current IL can begenerated by converting the drain current of the P-type FET (Q12) byusing a resistive element R12. Note that a feedback signal EO isgenerated in a manner similar to that in FIG. 1, and therefore aduplicated explanation is omitted.

In the power-supply apparatus according to the comparative example shownin FIG. 4, a current flowing to the high-potential side FET (QH) isdetected by using the sense FET (Q11). Note that they are configured sothat a current equal to 1/N of the current flowing through thehigh-potential side FET (QH) flows through the sense FET (Q11). That is,the size of the sense FET (Q11) is 1/N of the size of the high-potentialside FET (QH). In the case where the power-supply apparatus is used fora large current, the value of N may be, for example, 5000 to 20000.Therefore, the sense FET (Q11) needs to have high detection accuracy.Because of this reason, the high-potential side FET (QH) and the senseFET (Q11) are formed on the same semiconductor chip 115. For example, byforming the high-potential side FET (QH) and the sense FET (Q11) on thesame semiconductor chip 115, the variations in the threshold voltage Vgsand the pair ratio of on-resistances between those FETs caused by themanufacturing process can be minimized.

Further, since the high-potential side FET (QH) and the sense FET (Q11)operate as source-follower output FETs, it is necessary to make theirsource potentials equal to each other in order to adjust the currentflowing through the sense FET (Q11) to 1/N of the current flowingthrough the high-potential side FET (QH). For example, by forming thedrains and the sources of the high-potential side FET (QH) and the senseFET (Q11) on the same semiconductor chip 115, their voltages can be madeequal to each other.

However, when the high-potential side FET (QH) and the sense FET (Q11)are formed on the same semiconductor chip 115, it is impossible toreplace the high-potential side FET (QH) alone. That is, thehigh-potential side FET (QH) and the sense FET (Q11) cannot be separatedfrom each other. Therefore, when the high-potential side FET (QH) isreplaced with another high-potential side FET (QH), the sense FET (Q11)also needs to be replaced together with the high-potential side FET(QH).

That is, it is necessary to select the high-potential side FET (QH) andthe low-potential side FET (QL) according to the load to which electricpower is supplied. However, when a purpose-built sense FET (Q11) isused, a general-purpose high-potential side FET (QH) cannot be usedbecause the sense FET (Q11) is set with a certain high-potential sideFET (QH). Therefore, the high-potential side FET to be used cannot befreely selected. Further, since a general-purpose high-potential sideFET (QH) cannot be used, the cost for manufacturing the power-supplyapparatus increases.

In contrast to this, in the power-supply apparatus according to thisembodiment, voltage signals V1 and V2 corresponding to the currentflowing to the inductor L1 are generated by the signal generation unit(CR-circuit) 12, and the voltage signals V1 and V2 are converted into acurrent signal by the trans-conductance amplifier AMP1. Further, thecurrent signal output from the trans-conductance amplifier AMP1 isconverted into a voltage signal by using the converter R2, and thisvoltage signal is used as the feedback signal CS.

Therefore, since the feedback signal CS corresponding to the currentflowing to the inductor L1 can be generated without disposing anypurpose-built sense FET, the high-potential side FET (QH) to be used canbe freely selected. That is, unlike the power-supply apparatus shown inFIG. 4, it is unnecessary to form the high-potential side FET (QH) andthe sense FET (Q11) on the same semiconductor chip 115. Therefore, thehigh-potential side FET (QH) to be used can be freely selected. Further,since a general-purpose high-potential side FET (QH) can be used, thecost for manufacturing the power-supply apparatus can be reduced.

Second Embodiment

Next, a power-supply apparatus according to a second embodiment isexplained. FIG. 5 is a circuit diagram showing a power-supply apparatusaccording to this embodiment. As a power-supply apparatus according tothis embodiment, a case where the power-supply apparatus explained abovein the first embodiment is applied to a power-supply apparatus using amulti-phase technique is shown. Note that in FIG. 5, the same componentsas those in the power-supply apparatus in the first embodiment aredenoted by the same reference numerals.

As shown in FIG. 5, a power-supply apparatus according to thisembodiment includes a plurality of output stages 40_0 to 40_2 each ofwhich includes, at least, an inductor L1, a high-potential side FET(QH), a low-potential side FET (QL), a signal generation unit 12, atrans-conductance amplifier AMP1, a converter R2, and a control unit 10.Although an example where the power-supply apparatus includes threeoutput stages 40_0 to 40_2 is shown in FIG. 5, the number of the outputstages provided in the power-supply apparatus may be arbitrarilydetermined, provided that the number is greater than one. Further, thepower-supply apparatus also includes a controller 50 that controls theplurality of output stages 40_0 to 40_2.

The output sides of the inductors L1_0 to L1_2 of the output stages 40_0to 40_2 are connected to a load LD. Further, current IL_0 to IL_2flowing through the respective inductors L1_0 to L1_2 are supplied tothe load LD. A capacitive element Cv is disposed between the outputsides of the inductors L1_0 to L1_2 and the ground potential. Bydisposing the capacitive element Cv, the output voltage Vout issmoothed.

Note that in this specification, for the sake of convenience, theinductors of the output stages 40_0, 40_1 and 40_2 are referred to as“inductor L1_0”, “inductor L1_1” and “inductor L1_2” respectively. Eachof these inductors L1_0 to L1_2 is substantially identical to theinductor L1 shown in FIG. 1. Reference numerals for other components aredetermined in a similar manner.

The output stage 40_0 supplies a current IL_0 to the load LD. Thecurrent IL_0 supplied to the load LD can be adjusted by controlling theon/off timings of the high-potential side FET (QH_0) and thelow-potential side FET (QL_0). That is, the high-potential side FET(QH_0) and the low-potential side FET (QL_0) are configured so that theyare turned on/off in a complementary manner. Further, by controlling theduty ratio of these on/off operations, the current IL_0 can be adjusted.The duty ratio is determined by detecting the output voltage Voutapplied to the load LD and the current IL_0 flowing through the inductorL1_0 and feeding back these two detection results. That is, thepower-supply apparatus according to this embodiment is a power-supplyapparatus using a peak current control scheme.

The high-potential side FET (QH_0) is disposed between the input voltageVin and the input side of the inductor L1_0. The low-potential side FET(QL_0) is disposed between the input side of the inductor L1_0 and theground potential. When the high-potential side FET (QH_0) is in anon-state and the low-potential side FET (QL_0) is in an off-state, acurrent is supplied to the input side of the inductor L1_0. In thisstate, a current IL_0 flows to the inductor L1_0 and this current issupplied to the load LD.

On the other hand, when the high-potential side FET (QH_0) is in anoff-state and the low-potential side FET (QL_0) is in an on-state, theinput side of the inductor L1_0 is brought to a predetermined potential.That is, since the low-potential side FET (QL_0) becomes an on-state,the input side of the inductor L1_0 is connected to the groundpotential. Therefore, the counter electromotive force that occurs in theinductor L1_0 can be clamped. Each of the high-potential side FET (QH_0)and the low-potential side FET (QL_0) can be formed by using, forexample, an N-channel type vertical power MOSFET.

The signal generation unit 12_0 generates voltage signals V1 and V2_0corresponding to the current IL_0 flowing to the inductor L1_0. Notethat the voltage signals V1 and V2_0 correspond to a voltage differencegenerated by the DC resistive component DCR of the inductor L1_0. Thatis, the inductor L1_0 includes an inductive component L and the DCresistive component DCR. Therefore, by detecting the potentialdifference between the input side and the output side of this DCresistive component DCR, the current flowing through the inductor L1_0can be detected. As for the voltage signal V1, since the output sides ofthe inductors L1_0 to L1_2 are connected to the common node, the voltagesignal V1 is the common signal.

The signal generation unit 12_0 can be formed by using a CR-circuitincluding a capacitive element C1_0 and a resistive element R1_0connected in series. The CR-circuit is connected in parallel with theinductor L1_0. As shown in FIG. 5, one end of the resistive element R1_0provided in the CR-circuit is connected to the input side of theinductor L1_0, and one end of the capacitive element C1_0 is connectedto the output side of the inductor L1_0. Further, the other ends of theresistive element R1_0 and the capacitive element C1_0 are connected toeach other. The one end of the capacitive element C1_0 is connected tothe non-inverting input of the trans-conductance amplifier AMP1_0(hereinafter referred to as “amplifier AMP1_0”), and the other ends ofthe resistive element R1_0 and the capacitive element C1_0 are connectedto the inverting input of the amplifier AMP1_0. That is, the potentialdifference across the capacitive element C1_0 is output to the amplifierAMP1_0 as the voltage signals V1 and V2_0.

In the following explanation, the inductance of the inductor L1_0 isrepresented as “L1; the DC resistive component DCR is represented as“R0”; the capacitance of the capacitive element C1_0 is represented as“C1”; and the resistance of the resistive element R1_0 is represented as“R1”. It is necessary to make the time constant L1/R0 of the inductorL1_0 equal to the time constant R1*C1 of the CR-circuit. Therefore, thecapacitance C1 of the capacitive element C1_0 and the resistance R1 ofthe resistive element R1_0 of the signal generation unit 12_0 areadjusted so that the relation “L1/R0=R1*C1” is satisfied.

The amplifier AMP1_0 outputs a current according to the voltage signalsV1 and V2_0 generated by the signal generation unit 12_0. The currentoutput from the amplifier AMP1_0 is converted into a voltage signal CS_0by the converter R2_0. For example, the converter R2_0 can be formed byusing a resistive element whose one end is connected to the output sideof the amplifier AMP1_0 and whose other end is connected to the ground.

Further, a bias current source Ib_0 for supplying a bias current may bedisposed on the output side of the amplifier AMP1_0. When the biascurrent source Ib_0 is provided, a voltage signal that is obtained byconverting the total of the current output from the amplifier AMP1_0 andthe current supplied from the bias current source by the converter R2_0is used as the voltage signal CS_0. In other words, the voltage signalCS_0 can be positively biased by an amount equivalent to the currentsupplied from the bias current source.

The voltage signal CS_0 is supplied to the non-inverting input of thecomparator CMP1_0 as a second feedback signal. Further, a first feedbacksignal EO is supplied to the inverting input of the comparator CMP1_0.The first feedback signal EO is generated by using an amplifier AMP2 andan error amplifier EA provided in the controller 50. Note that the firstfeedback signal EO is generated by a method similar to that explained inthe first embodiment, and therefore a duplicated explanation is omitted.

The comparator CMP1_0 receives the first feedback signal EO and thesecond feedback signal CS_0 (i.e., the voltage signal CS_0) and outputsa comparison result of these feedback signals to a reset input R of aflip-flop FF1_0. Specifically, the comparator CMP1_0 outputs ahigh-level signal (“1”) to the reset input R of the flip-flop FF1_0 at atiming at which the second feedback signal CS_0 becomes larger than thefirst feedback signal EO.

A clock signal CLK_0 output from a clock generation circuit 51 providedin the controller 50 is supplied to a set input S of the flip-flopFF1_0. Further, the flip-flop FF1_0 outputs, from its non-invertingoutput Q, a signal PWM_0 for PWM control to a driver 11_0. The driver11_0 drives the high-potential side FET (QH_0) and the low-potentialside FET (QL_0) according to the signal PWM_0. For example, when thesignal PWM_0 is at a high level, the driver 11_0 turns on thehigh-potential side FET (QH_0) and turns off the low-potential side FET(QL_0). Further, when the signal PWM_0 is at a low level, the driver11_0 turns off the high-potential side FET (QH_0) and turns on thelow-potential side FET (QL_0).

As shown in FIG. 5, the amplifier AMP1_0, the bias current source Ib_0,the comparator CMP1_0, the flip-flop FF1_0, and the driver 11_0 may beformed as one module 41_0. Note that the comparator CMP1_0, theflip-flop FF1_0, and the driver 11_0 correspond to the control unit 10shown in FIG. 1.

In the power-supply apparatus according to this embodiment, the outputstages 40_1 and 40_2, each of which has a configuration identical tothat of the above-explained output stage 40_0, are arranged in parallelwith each other for the load LD. Note that the configuration of each ofthe output stages 40_1 and 40_2 is similar to that of the output stage40_0, and therefore their explanations are omitted.

The controller 50 supplies clock signals CLK_0, CLK_1 and CLK_2generated in the clock generation circuit 51 to the output stages 40_0,40_1 and 40_2 respectively. For example, each of the clock signalsCLK_0, CLK_1 and CLK_2 is a trigger signal. Further, the frequencies ofthese clock signals are the same as each other but their phases aredifferent from one another. Further, the controller 50 supplies thecommon first feedback signal EO to the output stages 40_0, 40_1 and40_2.

Next, an operation of the power-supply apparatus according to thisembodiment is explained with reference to a timing chart shown in FIG.6. At a timing t11, when a high-level clock signal CLK_0 is suppliedfrom the clock generation circuit 51 to the set input S of the flip-flopFF1_0 provided in the output stage 40_0, the flip-flop FF1_0 outputs ahigh-level signal PWM_0 from its non-inverting output Q. At this point,since the second feedback signal CS_0 is smaller than the first feedbacksignal EO, the output of the comparator CMP1_0 remains at the low level.The signal PWM_0 remains at the high level until a high-level signal issupplied to the reset input R.

When the signal PWM_0 becomes a high level, the driver 11_0 turns on thehigh-potential side FET (QH_0) and turns off the low-potential side FET(QL_0). As a result, a current IL_0 is supplied to the inductor L1_0 andthis current IL_0 is supplied to the load LD.

The signal generation unit 12_0 outputs voltage signals V1 and V2_0corresponding to the current IL_0 flowing through the inductor L1_0. Theamplifier AMP1_0 outputs a current according to the voltage signals V1and V2_0 output from the signal generation unit 12_0. Then, the currentoutput from the amplifier AMP1_0 is converted into the voltage signalCS_0, which is the second feedback signal, by the converter R2_0. Whenthe high-potential side FET (QH_0) is in an on-state, the currentcontinues to be supplied to the inductor L1_0. Therefore, the secondfeedback signal CS_0, which corresponds to the current flowing to theinductor L1_0, continues to increase.

Further, since the current continues to be supplied to the inductorL1_0, the output voltage Vout also rises. Therefore, the first feedbacksignal EO corresponding to the output voltage Vout decreases. Note thatthe output voltage Vout and the first feedback signal EO have such arelation that when the output voltage Vout increases, the first feedbacksignal EO decreases, and when the output voltage Vout decreases, thefirst feedback signal EO increases.

Then, at a timing t12, when the second feedback signal CS_0 becomeslarger than the first feedback signal EO, the comparator CMP1_0 outputsa high-level signal (“1”) to the reset input R of the flip-flop FF1_0.Upon receiving the high-level signal, the flip-flop FF1_0 lowers itsnon-inverting output Q to a low level. Therefore, the signal PWM_0becomes a low level.

When the signal PWM_0 becomes a low level, the driver 11_0 turns off thehigh-potential side FET (QH_0) and turns on the low-potential side FET(QL_0). As a result, the input side of the inductor L1_0 is connected tothe ground potential, and the counter electromotive force that occurs inthe inductor L1_0 is clamped.

Since the high-potential side FET (QH_0) remains in the off-state afterthat, no current is supplied to the input side of the inductor L1_0through the high-potential side FET (QH_0). Therefore, the state wherethe second feedback signal CS_0 is smaller than the first feedbacksignal EO is maintained.

Then, at a timing t13, when a high-level clock signal CLK_1 is suppliedfrom the clock generation circuit 51 to the set input S of the flip-flopFF1_1 provided in the output stage 40_1, the flip-flop FF1_1 outputs ahigh-level signal PWM_1 from its non-inverting output Q. At this point,since the second feedback signal CS_1 is smaller than the first feedbacksignal EO, the output of the comparator CMP1_1 remains at the low level.The signal PWM_1 remains at the high level until a high-level signal issupplied to the reset input R. The subsequent operations are similar tothe above-explained operations of the output stage 40_0, and therefore aduplicated explanation is omitted. Further, the operations of the outputstage 40_2 in the timing t15 to t16 are similar to the operations of theoutput stage 40_0, and therefore a duplicated explanation is omitted.

As shown in FIG. 6, in the power-supply apparatus according to thisembodiment, the clock generation circuit 51 supplies the clock signalsCLK_0, CLK_1 and CLK_2 having mutually different phases to the outputstages 40_0, 40_1 and 40_2 respectively. Therefore, the output stages40_0, 40_1 and 40_2 can supply the currents IL_0 to IL_2 to the load LDat mutually different timings.

FIGS. 7 and 8 show examples of operation waveforms of the power-supplyapparatus according to this embodiment. The upper section of each ofFIGS. 7 and 8 shows the voltage signals V1 and V2_0 to V2_2 supplied tothe amplifiers AMP1_0 to AMP1_2. The middle section shows differencevalues between the voltage signal V1 and the voltage signals V2_0 toV2_2. The lower section shows the voltage signals CS_0 to CS_2, whichare the second feedback signals. Further, FIG. 7 shows operationwaveforms in a state where there is no load LD, and FIG. 8 showsoperation waveforms in a state where there is a load LD.

As shown in the upper section of FIG. 7, when there is no load LD, thevoltage signals V1 and V2_0 to V2_2 supplied to the amplifiers AMP1_0 toAMP1_2 oscillate near 1.200 mV. Note that the voltage signals V2_0 toV2_2 oscillate with their phases being shifted from one another by ⅓phase. Further, as shown in the middle section of FIG. 7, the differencevalues between the voltage signal V1 and the voltage signals V2_0 toV2_2 oscillate near 0 mV. Further, as shown in the lower section of FIG.7, the voltage signals CS_0 to CS_2, which are the second feedbacksignals, oscillate near 100 mV.

Meanwhile, when there is a load LD, as shown in the upper section ofFIG. 8, the voltage signals V2_0 to V2_2 supplied to the amplifiersAMP1_0 to AMP1_2 oscillate near 1.215 mV. Note that the voltage signalsV2_0 to V2_2 increase by AV with respect to the voltage signal V1.Further, as shown in the middle section of FIG. 8, the difference valuesbetween the voltage signal V1 and the voltage signals V2_0 to V2_2oscillate near 20 mV. That is, the difference values increase withrespect to the case where there is no load LD. Further, as shown in thelower section of FIG. 8, the voltage signals CS_0 to CS_2, which are thesecond feedback signals, oscillate near 700 mV. That is, the voltagesignals CS_0 to CS_2 increase compared to the case where there is noload LD.

Note that the differences between the voltage signal V1 and the voltagesignals V2_0 to V2_2 correspond to the magnitudes of the currents IL_0to IL_2 flowing through the inductors L1_0 to L1_2. Therefore, whenthere is a load LD, the currents IL_0 to IL_2 flowing through theinductors L1_0 to L1_2 also increase. Consequently, the voltage signalsCS_0 to CS_2, which are the second feedback signals, also increase.

In a power-supply apparatus using a switching scheme, there is a problemthat when the amount of current supplied to the load LD increases, theon-resistance loss, the heat generation, and so on of the switchingtransistors (i.e., high-potential side FET and low-potential side FET)increase as a result of the increased current. This problem can besolved by using a multi-phase technique. That is, by connecting aplurality of output stages 40_0 to 40_2 in parallel with each other forthe load LD and supplying clock signals having mutually different phasesto the respective output stages 40_0 to 40_2 as in the case of theabove-explained power-supply apparatus, currents IL_0 to IL_2 can besupplied from the respective inductors L1_0 to L1_2 in a distributedmanner.

By using the multi-phase technique as described above, the increases inthe on-resistance loss, the heat generation, and so on of the switchingtransistors can be prevented or reduced. Further, the more the number ofoutput stages is increased, the more the ripple voltage can be reduced.Further, the amount of current flowing to each inductor can also bereduced. As a result, the inductance of each inductor can be reduced,thus making it possible to increase the response speed of thepower-supply apparatus. Further, the current flowing to the load LD canbe easily increased by increasing the number of output stages.

Further, similarly to the first embodiment, in the power-supplyapparatus according to this embodiment, the feedback signals CS_0 toCS_2 corresponding to the currents flowing to the inductor L1_0 to L1_2can be generated without disposing any purpose-built sense FET, thusmaking it possible to freely select the high-potential side FET to beused. Further, since a general-purpose high-potential side FET can beused, the cost for manufacturing the power-supply apparatus can bereduced.

While the invention has been described in terms of several embodiments,those skilled in the art will recognize that the invention can bepracticed with various modifications within the spirit and scope of theappended claims and the invention is not limited to the examplesdescribed above.

Further, the scope of the claims is not limited by the embodimentsdescribed above.

Furthermore, it is noted that the Applicant's intent is to encompassequivalents of all claim elements, even if amended later duringprosecution.

What is claimed is:
 1. A power-supply apparatus comprising: a high-sidetransistor and a low-side transistor coupled in series, the high-sidetransistor being coupled with a power supply voltage and the low-sidetransistor being coupled with a ground voltage; an inductor having aninput side and an output side, the input side of the inductor beingcoupled with the high-side transistor and the low-side transistor andthe output side being configured to couple with an external load; asignal generation circuit coupled with the input side and the outputside of the inductor, the signal generation circuit being configured togenerate a first voltage signal based on a first current flowing to theinductor; a trans-conductance amplifier whose input side is coupled withthe signal generation circuit, the trans-conductance amplifier beingconfigured to output a second current based on the first voltage signal;a first control unit including a driver circuit driving the high-sidetransistor and the low-side transistor; a second control unitcontrolling the first control unit, the second control unit beingconfigured to output a first feedback signal based on a voltage of theoutput side of the inductor; and a converter coupled with an output sideof the trans-conductance amplifier, the converter being configured toconvert the second current into a second feedback signal, wherein thehigh-side transistor and the low-side transistor are controlled based onthe first feedback signal and the second feedback signal.
 2. Thepower-supply apparatus according to claim 1, wherein the high-sidetransistor is a first N-type MOSFET having a first gate terminal, afirst source terminal and a first drain terminal, wherein the firstdrain terminal is coupled with a power supply voltage, wherein thelow-side transistor is a second N-type MOSFET having a second gateterminal, a second source terminal and a second drain terminal, whereinthe second drain terminal is coupled with the first source terminal, andthe second source terminal is coupled with a ground voltage, and whereinthe input side of the inductor is coupled with the first source terminaland the second drain terminal.
 3. The power-supply apparatus accordingto claim 1, wherein the high-side transistor is configured to supply acurrent to the inductor while the high-side transistor is in anon-state, wherein, while the high-side transistor is in an off-state,the low-side transistor is in an on-state so that a voltage level of theinput side of the inductor reaches a predetermined level.
 4. Thepower-supply apparatus according to claim 1, wherein the first controlunit includes a comparator circuit and a flip-flop circuit, wherein thefirst feedback signal and the second feedback signal are inputted intothe comparator circuit, wherein an output signal of the comparatorcircuit is inputted into the flip-flop circuit, and wherein theflip-flop circuit is configured to output a PWM signal to control thedriver circuit.
 5. The power-supply apparatus according to claim 1,wherein the second control unit includes a clock generation circuit andan error amplifier circuit, wherein the clock generation circuit isconfigured to provide a clock signal to the first control unit, andwherein the error amplifier circuit is configured to provide the firstfeedback signal to the first control unit.
 6. The power-supply apparatusaccording to claim 1, wherein the voltage of the output side of theinductor is inputted into the second control unit, and wherein the firstfeedback signal is generated based on the voltage of the output side ofthe inductor.
 7. The power-supply apparatus according to claim 1,wherein the first voltage signal corresponds to a voltage differencegenerated by a DC resistive component of the inductor.
 8. Thepower-supply apparatus according to claim 1, wherein the signalgeneration circuit comprises a CR-circuit connected in parallel with theinductor, the CR-circuit comprising a capacitive element and a firstresistive element connected in series, and the signal generation circuitoutputs a voltage difference across the capacitive element as the firstvoltage signal.
 9. The power-supply apparatus according to claim 8,wherein the CR-circuit is configured so that a relation “L1/R0=R1*C1” issatisfied, where: an inductance of the inductor is L1; a DC resistivecomponent of the inductor is R0; a capacitance of the capacitive elementis C1; and a resistance of the first resistive element is R1.
 10. Thepower-supply apparatus according to claim 8, wherein one end of thefirst resistive element is connected to the input side of the inductor,one end of the capacitive element is connected to the output side of theinductor, another end of the first resistive element and another end ofthe capacitive element are connected to each other, the one end of thecapacitive element is connected to a non-inverting input of thetrans-conductance amplifier, and the another end of the first resistiveelement and the another end of the capacitive element are connected toan inverting input of the trans-conductance amplifier.
 11. Thepower-supply apparatus according to claim 1, wherein the convertercomprises a second resistive element, one end of the second resistiveelement being connected to the output side of the trans-conductanceamplifier, and another end of the second resistive element beingconnected to a ground.
 12. The power-supply apparatus according to claim1, further comprising a bias current source that supplies a bias currentto an output side of the trans-conductance amplifier.
 13. Thepower-supply apparatus according to claim 1, wherein when a voltage ofthe first feedback signal is larger than a voltage of the secondfeedback signal, the first control unit turns on the high-sidetransistor and turns off the low-side transistor.